Semiconductor device with reduced line-to-line capacitance and cross talk noise

A transistor device is disclosed, having an insulating material disposed between the gate electrode and the drain and source lines, wherein the dielectric constant of the insulating material is 3.5 or less. Accordingly, the capacitance between the gate electrode and the drain and source lines can be...

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Bibliographic Details
Main Authors HORSTMANN MANFRED, WIECZOREK KARSTEN, HAUSE FREDERICK N
Format Patent
LanguageEnglish
Published 16.05.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A transistor device is disclosed, having an insulating material disposed between the gate electrode and the drain and source lines, wherein the dielectric constant of the insulating material is 3.5 or less. Accordingly, the capacitance between the gate electrode and the drain and source lines can be reduced, thereby improving signal performance of the field effect transistor with decreased cross talk noise.
Bibliography:Application Number: US20010812372