Tungsten film forming method
A method of forming a tungsten film is capable of forming a tungsten film having a low resistivity. The method of forming a tungsten film (50) on a surface of a workpiece by a vacuum processing system (2) comprises, in sequential steps: a seed crystal growing process for growing tungsten seed crysta...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
25.04.2002
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | A method of forming a tungsten film is capable of forming a tungsten film having a low resistivity. The method of forming a tungsten film (50) on a surface of a workpiece by a vacuum processing system (2) comprises, in sequential steps: a seed crystal growing process for growing tungsten seed crystal grains (48) on the surface of the workpiece in an atmosphere of a film forming gas containing tungsten atoms; a boron-exposure process for exposing the workpiece to an atmosphere of a boron-containing gas for a short time; and a tungsten film forming process for forming a tungsten film by making the tungsten seed crystal grains grow in an atmosphere of a gas containing a film forming gas containing tungsten atoms, and a hydrogen-diluted boron-containing gas. The tungsten film has a low resistivity. |
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Bibliography: | Application Number: US20010988327 |