Fabrication method for semiconductor integrated circuit devices and semiconductor integrated circuit device

• Main Authors: YAMAZAKI KAZUO, TADOKORO MASAHIRO, KUSAKARI KOUSUKE, KUNIYOSHI SHINJI, IKEDA TAKENOBU
• Format: Patent
• Language: English
• Published: 07.02.2002
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To improve a shape of a gate electrode having SiGe, after patterning a gate electrode 15G having an SiGe layer 15b by a dry etching process, a plasma processing (postprocessing) is carried out in an atmosphere of an Ar/CHF3 gas. Thereby, the gate electrode 15G can be formed without causing side etch...