SEMICONDUCTOR DEVICES INCLUDING ELECTRODE STRUCTURES

A semiconductor device in certain embodiments includes an insulating layer provided above the upper surface of a semiconductor substrate, and a capacitive element section and a resistance element section formed above the insulating layer. In the capacitive element section, a gate electrode serving a...

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Bibliographic Details
Main Authors ODA YUJI, KOIKE MICHIO
Format Patent
LanguageEnglish
Published 09.08.2001
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device in certain embodiments includes an insulating layer provided above the upper surface of a semiconductor substrate, and a capacitive element section and a resistance element section formed above the insulating layer. In the capacitive element section, a gate electrode serving as an opposite electrode for the capacitive element is formed above the insulating layer. The gate electrode is covered with a dielectric layer comprising silicon oxide, silicon nitride or tantalum oxide, and an electrode for the capacitive element comprising MoSix is provided above the dielectric layer. The resistance element section has a resistance element comprising MoSix formed simultaneously with the electrode for the capacitive element in the same process.
Bibliography:Application Number: US19980178875