Optical semiconductor device and semiconductor light-emitting device

• Main Authors: Yamauchi, Shunya, Asakura, Hideaki, Nakamura, Atsushi, Takita, Hayato
• Format: Patent
• Language: English
• Published: 22.10.2024
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

An optical semiconductor device includes a semiconductor substrate with a protrusion that forms a lower end portion of a mesa stripe structure in a stripe shape extending in a first direction; a multi-quantum well layer in a stripe shape extending in the first direction on the protrusion, wherein the multi-quantum well layer forms an intermediate portion of the mesa stripe structure; a semiconductor layer in a stripe shape extending in the first direction on the intermediate portion, wherein the semiconductor layer forms an upper end portion of the mesa stripe structure; and a semi-insulating semiconductor layer in contact with side surfaces of the mesa stripe structure on both sides in a second direction perpendicular to the first direction. The optical semiconductor device may include a first electrode on a surface of the semiconductor substrate and/or a second electrode on the upper end surface of the mesa stripe structure.