Bipolar transistors

The present disclosure relates to semiconductor structures and, more particularly, to bipolar transistors and methods of manufacture. The structure includes: an intrinsic base region; an emitter region above the intrinsic base region; a collector region under the intrinsic base region; and an extrin...

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Bibliographic Details
Main Authors Jain, Vibhor, Tan, Shyue Seng, Pekarik, John J, Gauthier, Jr., Robert J, Cai, Xinshu
Format Patent
LanguageEnglish
Published 01.10.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present disclosure relates to semiconductor structures and, more particularly, to bipolar transistors and methods of manufacture. The structure includes: an intrinsic base region; an emitter region above the intrinsic base region; a collector region under the intrinsic base region; and an extrinsic base region comprising metal material, and which surrounds the intrinsic base region and the emitter region.
Bibliography:Application Number: US202117559085