Method for manufacturing a memory

This application provides a method for manufacturing a memory and a memory thereof. The manufacturing method includes: providing a substrate, where the substrate includes a plurality of spaced active area and each of the plurality of spaced active area includes a first contact region and a second co...

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Bibliographic Details
Main Authors Liu, Zhongming, Yu, Yexiao, Chen, Longyang
Format Patent
LanguageEnglish
Published 01.10.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:This application provides a method for manufacturing a memory and a memory thereof. The manufacturing method includes: providing a substrate, where the substrate includes a plurality of spaced active area and each of the plurality of spaced active area includes a first contact region and a second contact region; forming a plurality of spaced bit lines on the substrate, where each of the plurality of spaced bit lines is connected to at least one first contact region; forming a first isolation layer on each of the plurality of spaced bit lines, a first trench extending in a first direction between two adjacent first isolation layers of the plurality of spaced bit lines; etching a bottom along the first trench to form a second trench; and forming a plurality of conducting wires and a plurality of second isolation layers in the second trench.
Bibliography:Application Number: US202117403570