Power semiconductor device having a control cell for controlling a load current

A power semiconductor device includes a control cell for controlling a load current and electrically connected to a load terminal structure on one side and to a drift region on another side. The drift region includes dopants of a first conductivity type. The control cell includes: a mesa extending a...

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Bibliographic Details
Main Authors Thees, Hans-Juergen, Storbeck, Olaf, Probst, Marc, Loesch, Stefan, Richter, Tom
Format Patent
LanguageEnglish
Published 10.09.2024
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Summary:A power semiconductor device includes a control cell for controlling a load current and electrically connected to a load terminal structure on one side and to a drift region on another side. The drift region includes dopants of a first conductivity type. The control cell includes: a mesa extending along a vertical direction and including a contact region having dopants of the first or second conductivity type and electrically connected to the load terminal structure, and a channel region coupled to the drift region; a control electrode configured to control a conduction channel in the channel region; and a contact plug including at least one of a doped semiconductive material or metal, and arranged in contact with the contact region. An electrical connection between the contact region and load terminal structure is established by the contact plug, a portion of which horizontally projects beyond lateral boundaries of the mesa.
Bibliography:Application Number: US202217716555