Image sensor having P-type isolation structure

An image sensor includes a first active region including a first floating diffusion region, a first transistor active region, and a first isolation structure for electrically isolating the first floating diffusion region from the first transistor active region, wherein the first isolation structure...

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Bibliographic Details
Main Authors Lee, Kyoung-In, Oh, Sun-Ho, Park, Sung-Kun
Format Patent
LanguageEnglish
Published 10.09.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An image sensor includes a first active region including a first floating diffusion region, a first transistor active region, and a first isolation structure for electrically isolating the first floating diffusion region from the first transistor active region, wherein the first isolation structure comprises a first P-type doped region disposed on one corner of the first active region and a second P-type doped region disposed in a center of the first active region, the first P-typed doped region and the second P-type doped region being electrically coupled to each other.
Bibliography:Application Number: US201916522472