Gallium nitride integrated circuits including non-gold-based metallic materials

Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comp...

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Bibliographic Details
Main Authors Flanders, Kenneth, Murphy, Denis Michael, Stubler, Peter R, Srivastava, Puneet, Green, Leslie P, Piedra, Daniel, Fiorenza, James G, Proudman, Andrew
Format Patent
LanguageEnglish
Published 10.09.2024
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Summary:Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.
Bibliography:Application Number: US202218148982