Integrated circuit structures having differentiated interconnect lines in a same dielectric layer

Integrated circuit structures having differentiated interconnect lines in a same dielectric layer, and methods of fabricating integrated circuit structures having differentiated interconnect lines in a same dielectric layer, are described. In an example, an integrated circuit structure includes an i...

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Main Authors Lajoie, Travis W, Wang, Yih, Alzate Vinasco, Juan G, Sell, Bernhard, Ghani, Tahir, Gardiner, Allen B, Ku, Chieh-Jen, Sharma, Abhishek A, Lin, Blake C, Ogadhoh, Shem O, Wang, Pei-Hua, Kavalieros, Jack T
Format Patent
LanguageEnglish
Published 03.09.2024
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Summary:Integrated circuit structures having differentiated interconnect lines in a same dielectric layer, and methods of fabricating integrated circuit structures having differentiated interconnect lines in a same dielectric layer, are described. In an example, an integrated circuit structure includes an inter-layer dielectric (ILD) layer above a substrate. A plurality of conductive interconnect lines is in the ILD layer. The plurality of conductive interconnect lines includes a first interconnect line having a first height, and a second interconnect line immediately laterally adjacent to but spaced apart from the first interconnect line, the second interconnect line having a second height less than the first height.
Bibliography:Application Number: US201916583691