Integrated circuit structures having differentiated interconnect lines in a same dielectric layer
Integrated circuit structures having differentiated interconnect lines in a same dielectric layer, and methods of fabricating integrated circuit structures having differentiated interconnect lines in a same dielectric layer, are described. In an example, an integrated circuit structure includes an i...
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Main Authors | , , , , , , , , , , , |
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Format | Patent |
Language | English |
Published |
03.09.2024
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Subjects | |
Online Access | Get full text |
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Summary: | Integrated circuit structures having differentiated interconnect lines in a same dielectric layer, and methods of fabricating integrated circuit structures having differentiated interconnect lines in a same dielectric layer, are described. In an example, an integrated circuit structure includes an inter-layer dielectric (ILD) layer above a substrate. A plurality of conductive interconnect lines is in the ILD layer. The plurality of conductive interconnect lines includes a first interconnect line having a first height, and a second interconnect line immediately laterally adjacent to but spaced apart from the first interconnect line, the second interconnect line having a second height less than the first height. |
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Bibliography: | Application Number: US201916583691 |