3D semiconductor device and structure with metal layers and a connective path

• Main Authors: Or-Bach, Zvi, Sekar, Deepak C, Cronquist, Brian
• Format: Patent
• Language: English
• Published: 03.09.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A 3D semiconductor device including: a first level including a plurality of first metal layers; a second level overlays the first level and includes at least one single crystal silicon layer, where the second level includes a plurality of transistors and a plurality of second metal layers, each transistor of the plurality of transistors includes a single crystal channel, where the plurality of second metal layers include interconnections between transistors of the plurality of transistors, where the second level is overlaid by a first isolation layer; a connective path from the plurality of transistors to the plurality of first metal layers, where the connective path includes a via disposed through at least the single crystal silicon layer, where each of at least one of the plurality of transistors includes a two sided gate, and where the single crystal silicon layer thickness is less than two microns.