MEMS device having decreased contact resistance

A method of manufacturing a MEMS device, wherein the MEMS device has a cavity in which a beam will move to change the capacitance of the device. After most of the device build-up has occurred, sacrificial material is removed to free the beam within the MEMS device cavity. Thereafter, exposed rutheni...

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Bibliographic Details
Main Authors Muyango, Jacques Marcel, Ghosh Dastider, Shibajyoti, Renault, Mickael
Format Patent
LanguageEnglish
Published 03.09.2024
Subjects
MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES
MICROSTRUCTURAL TECHNOLOGY
PERFORMING OPERATIONS
PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
TRANSPORTING
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Summary:A method of manufacturing a MEMS device, wherein the MEMS device has a cavity in which a beam will move to change the capacitance of the device. After most of the device build-up has occurred, sacrificial material is removed to free the beam within the MEMS device cavity. Thereafter, exposed ruthenium contacts are etched back with an etchant comprising chlorine to remove the top surface of both the top and bottom contacts. Due to this etch back process, low contact resistance can be achieved with less susceptibility to stiction events. Stiction performance can be further improved by conditioning the ruthenium contacts in a fluorine based plasma. The fluorine based plasma process, or fluorine treatment, can be performed prior to or after etch-back process of the ruthenium contacts.
Bibliography:Application Number: US202017608822