Buried word line of a dynamic random access memory and method for fabricating the same

A method for fabricating buried word line of a dynamic random access memory (DRAM) includes the steps of: forming a trench in a substrate; forming a first conductive layer in the trench; forming a second conductive layer on the first conductive layer, in which the second conductive layer above the s...

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Main Authors Wu, Chia-Chen, Chen, Tzu-Chieh, Tsai, Chih-Chieh, Chang, Kai-Jiun, Chen, Yi-Wei, Huang, Yi-An, Cheng, Tsun-Min, Chen, Pin-Hong
Format Patent
LanguageEnglish
Published 27.08.2024
Subjects
ELECTRICITY
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Summary:A method for fabricating buried word line of a dynamic random access memory (DRAM) includes the steps of: forming a trench in a substrate; forming a first conductive layer in the trench; forming a second conductive layer on the first conductive layer, in which the second conductive layer above the substrate and the second conductive layer below the substrate comprise different thickness; and forming a third conductive layer on the second conductive layer to fill the trench.
Bibliography:Application Number: US202217570345