Semiconductor device containing stress relaxation layer and method of making thereof
A structure includes a first material layer, a second material layer, and a stress relaxation layer having a thickness of 0.5 nm or less between the first material layer and the second material layer.
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| Main Authors | , |
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| Format | Patent |
| Language | English |
| Published |
27.08.2024
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A structure includes a first material layer, a second material layer, and a stress relaxation layer having a thickness of 0.5 nm or less between the first material layer and the second material layer. |
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| AbstractList | A structure includes a first material layer, a second material layer, and a stress relaxation layer having a thickness of 0.5 nm or less between the first material layer and the second material layer. |
| Author | Chadda, Saket Chen, Zhen |
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| Notes | Application Number: US202117240342 |
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| RelatedCompanies | GLO AB SAMSUNG ELECTRONICS CO., LTD |
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| Snippet | A structure includes a first material layer, a second material layer, and a stress relaxation layer having a thickness of 0.5 nm or less between the first... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | Semiconductor device containing stress relaxation layer and method of making thereof |
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