Semiconductor device containing stress relaxation layer and method of making thereof

A structure includes a first material layer, a second material layer, and a stress relaxation layer having a thickness of 0.5 nm or less between the first material layer and the second material layer.

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Bibliographic Details
Main Authors Chen, Zhen, Chadda, Saket
Format Patent
LanguageEnglish
Published 27.08.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A structure includes a first material layer, a second material layer, and a stress relaxation layer having a thickness of 0.5 nm or less between the first material layer and the second material layer.
Bibliography:Application Number: US202117240342