Memory array circuit and method of manufacturing same

A memory array includes a first memory cell configured to store data, a second memory cell configured to store data and a bit line extending along the first direction, and being over the first memory cell and the second memory cell. The first memory cell and the second memory cell are arranged along...

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Bibliographic Details
Main Authors Fujiwara, Hidehiro, Lin, Chih-Yu, Singh, Sahil Preet, Chen, Yen-Huei, Liao, Hung-Jen, Pan, Hsien-Yu
Format Patent
LanguageEnglish
Published 27.08.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A memory array includes a first memory cell configured to store data, a second memory cell configured to store data and a bit line extending along the first direction, and being over the first memory cell and the second memory cell. The first memory cell and the second memory cell are arranged along a first direction in a first column of memory cells. The bit line includes a first conductor extending in the first direction and being in a first conductive layer, and a second conductor extending in the first direction and being in a second conductive layer different from the first conductive layer.
Bibliography:Application Number: US202117213074