Multi-layered polysilicon and oxygen-doped polysilicon design for RF SOI trap-rich poly layer

In some embodiments, the present disclosure relates to a high-resistivity silicon-on-insulator (SOI) substrate, including a first polysilicon layer arranged over a semiconductor substrate. A second polysilicon layer is arranged over the first polysilicon layer, and a third polysilicon layer is arran...

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Bibliographic Details
Main Authors Wu, Cheng-Ta, Chen, Eugene, Cheng, Yu-Hung, Chiang, Chen-Hao, Tu, Yeur-Luen, Kalnitsky, Alexander
Format Patent
LanguageEnglish
Published 27.08.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In some embodiments, the present disclosure relates to a high-resistivity silicon-on-insulator (SOI) substrate, including a first polysilicon layer arranged over a semiconductor substrate. A second polysilicon layer is arranged over the first polysilicon layer, and a third polysilicon layer is arranged over the second polysilicon layer. An active semiconductor layer over an insulator layer may be arranged over the third polysilicon layer. The second polysilicon layer has an elevated concentration of oxygen compared to the first and third polysilicon layers.
Bibliography:Application Number: US202117519765