Three dimensional perpendicular magnetic tunnel junction with thin film transistor array

A method for manufacturing a magnetic random access memory array incudes forming a source region within a surface of a substrate, forming an array of three-dimensional (3D) structures over the substrate, each 3D structure being separated from an adjacent 3D structure by a cavity region, depositing a...

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Bibliographic Details
Main Authors Kim, Kuk-Hwan, Beery, Dafna, Walker, Andrew J, Levi, Amitay
Format Patent
LanguageEnglish
Published 20.08.2024
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A method for manufacturing a magnetic random access memory array incudes forming a source region within a surface of a substrate, forming an array of three-dimensional (3D) structures over the substrate, each 3D structure being separated from an adjacent 3D structure by a cavity region, depositing a channel material on a surface of at least one sidewall of each 3D structure, depositing a gate dielectric material over the channel material on the surface of the at least one sidewall of each 3D structure, forming a first isolation region in each cavity region between adjacent 3D structures over the substrate, and forming a first gate region over the first isolation region in each cavity region.
Bibliography:Application Number: US202217811581