Formulations for chemical mechanical polishing pads with high planarization efficiency and CMP pads made therewith

• Main Authors: Barton, Bryan E, Brugarolas Brufau, Teresa
• Format: Patent
• Language: English
• Published: 20.08.2024
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMISTRY; COMPOSITIONS BASED THEREON; DRESSING OR CONDITIONING OF ABRADING SURFACES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; PERFORMING OPERATIONS; POLISHING; SEMICONDUCTOR DEVICES; THEIR PREPARATION OR CHEMICAL WORKING-UP; TOOLS FOR GRINDING, BUFFING, OR SHARPENING; TRANSPORTING

CMP polishing pads or layers made from a polyurethane reaction product of a reaction mixture comprising (i) a liquid aromatic isocyanate component comprising one or more aromatic diisocyanates or a linear aromatic isocyanate-terminated urethane prepolymer, and (ii) a liquid polyol component comprising a) one or more polymeric polyols, b) from 12 to 40 wt. %, based on the total weight of the liquid polyol component, of a curative mixture of one or more small chain difunctional polyols having from 2 to 9 carbon atoms, a liquid aromatic diamine, wherein the mole ratio of liquid aromatic diamine to the total moles of small chain difunctional polyols and liquid aromatic diamine ranges from 15:85 to 40:60, wherein, the reaction mixture comprises 48 to 68 wt. % hard segment materials.