Self aligned replacement metal source/drain FINFET

A fin-shaped field effect transistor (finFET) device comprising includes a substrate. an insulating layer displaced over the substrate, and a fin. The device also includes a gate formed over the fin, the gate including: a gate stack; and a high-k dielectric on opposing side of the gate stack. The de...

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Bibliographic Details
Main Authors Robison, Robert R, Vega, Reinaldo A, Alptekin, Emre
Format Patent
LanguageEnglish
Published 13.08.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A fin-shaped field effect transistor (finFET) device comprising includes a substrate. an insulating layer displaced over the substrate, and a fin. The device also includes a gate formed over the fin, the gate including: a gate stack; and a high-k dielectric on opposing side of the gate stack. The device further includes metallic source and drain regions formed over the fin and on opposing sides of the gate.
Bibliography:Application Number: US202017070728