Line-end extension method and device

Methods of forming line-end extensions and devices having line-end extensions are provided. In some embodiments, a method includes forming a patterned photoresist on a first region of a hard mask layer. A line-end extension region is formed in the hard mask layer. The line-end extension region exten...

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Bibliographic Details
Main Authors Chang, Yu-Chen, Hsiao, Chih-Min, Chang, Shih-Ming, Yen, Yung-Sung, Liu, Ru-Gun, Lai, Chih-Ming, Lai, Chien-Wen
Format Patent
LanguageEnglish
Published 13.08.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods of forming line-end extensions and devices having line-end extensions are provided. In some embodiments, a method includes forming a patterned photoresist on a first region of a hard mask layer. A line-end extension region is formed in the hard mask layer. The line-end extension region extends laterally outward from an end of the first region of the hard mask layer. The line-end extension region may be formed by changing a physical property of the hard mask layer at the line-end extension region.
Bibliography:Application Number: US202217869707