Non-volatile semiconductor storage device and method of manufacturing the same

A non-volatile semiconductor storage device has a plurality of memory strings to each of which a plurality of electrically rewritable memory cells are connected in series. Each of the memory strings includes first semiconductor layers each having a pair of columnar portions extending in a vertical d...

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Bibliographic Details
Main Authors Komori, Yosuke, Aochi, Hideaki, Fukuzumi, Yoshiaki, Ishiduki, Megumi, Katsumata, Ryota, Kidoh, Masaru, Kito, Masaru, Tanaka, Hiroyasu
Format Patent
LanguageEnglish
Published 06.08.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A non-volatile semiconductor storage device has a plurality of memory strings to each of which a plurality of electrically rewritable memory cells are connected in series. Each of the memory strings includes first semiconductor layers each having a pair of columnar portions extending in a vertical direction with respect to a substrate and a coupling portion formed to couple the lower ends of the pair of columnar portions; a charge storage layer formed to surround the side surfaces of the columnar portions; and first conductive layers formed to surround the side surfaces of the columnar portions and the charge storage layer. The first conductive layers function as gate electrodes of the memory cells.
Bibliography:Application Number: US202218091728