Stacked transistors

A first interconnect layer is bonded to a first substrate. The first interconnect layer is deposited on a first device layer on a second device layer on a second substrate. The second device layer is revealed from the second substrate side. A first insulating layer is deposited on the revealed secon...

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Bibliographic Details
Main Authors Morrow, Patrick, Lilak, Aaron D, Mehandru, Rishabh
Format Patent
LanguageEnglish
Published 06.08.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A first interconnect layer is bonded to a first substrate. The first interconnect layer is deposited on a first device layer on a second device layer on a second substrate. The second device layer is revealed from the second substrate side. A first insulating layer is deposited on the revealed second device layer. A first opening is formed in the first insulating layer to expose a first portion of the second device layer. A contact region is formed on the exposed first portion of the second device layer.
Bibliography:Application Number: US202217567753