Semiconductor device and method of fabricating the same

• Main Authors: Lin, Yu-Ming, Lien, Wai-Yi, You, Jia-Chuan, Chang, Chia-Hao
• Format: Patent
• Language: English
• Published: 06.08.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method includes forming a gate stack over a substrate and a gate spacer on a sidewall of the gate stack; forming a source/drain region in the substrate and adjacent to the gate spacer; forming a first interlayer dielectric layer over the source/drain region; forming a protective layer over the gate stack and in contact with a top surface of the gate spacer; removing the first interlayer dielectric layer after forming the protective layer; forming an etch stop layer over the protective layer; forming a second interlayer dielectric layer over the etch stop layer; etching the second interlayer dielectric layer and the etch stop layer to form an opening that exposes a top surface of the protective layer; and forming a contact plug in the opening.