Methods for etching metal films using plasma processing

A method of plasma processing that includes maintaining a plasma processing chamber between 10° C. to 200° C., flowing oxygen and nitrogen into the plasma processing chamber, where a ratio of a flow rate of the nitrogen to a flow rate of oxygen is between about 1:5 and about 1:1, and etching a ruthe...

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Bibliographic Details
Main Authors Koty, Devi, Joy, Nicholas, Yang, Qingyun, Marchack, Nathan P, Engelmann, Sebastian Ulrich
Format Patent
LanguageEnglish
Published 06.08.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of plasma processing that includes maintaining a plasma processing chamber between 10° C. to 200° C., flowing oxygen and nitrogen into the plasma processing chamber, where a ratio of a flow rate of the nitrogen to a flow rate of oxygen is between about 1:5 and about 1:1, and etching a ruthenium/osmium layer by sustaining a plasma in the plasma processing chamber.
Bibliography:Application Number: US201916658620