Temperature compensated bulk acoustic wave device by neutral stress plane engineering through double sided silicon substrate integration

The present disclosure relates to a Bulk Acoustic Wave (BAW) device with a substantially symmetrical structure in a vertical direction. The disclosed BAW device includes a main device region having a top electrode, a bottom electrode, and a piezoelectric layer sandwiched between the top electrode an...

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Bibliographic Details
Main Authors Stokes, Paul, Fattinger, Gernot, Fattinger, Michael
Format Patent
LanguageEnglish
Published 30.07.2024
Subjects
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
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Summary:The present disclosure relates to a Bulk Acoustic Wave (BAW) device with a substantially symmetrical structure in a vertical direction. The disclosed BAW device includes a main device region having a top electrode, a bottom electrode, and a piezoelectric layer sandwiched between the top electrode and the bottom electrode, a bottom reflector section underneath the bottom electrode, a bottom substrate underneath the bottom reflector section, a top reflector section over the top electrode, and a top substrate over the bottom reflector section. Herein, the bottom reflector section, the bottom substrate, the top reflector section, and the top substrate are configured so that a neutral plane of the BAW device is positioned at a center of the piezoelectric layer.
Bibliography:Application Number: US202117371836