Optoelectronic semiconductor component with a current spreading structure containing silver, and optoelectronic device

An optoelectronic semiconductor component comprises a first semiconductor layer of a first conductivity type having a first main surface and a second semiconductor layer of a second conductivity type arranged on a side facing away from the first main surface of the first semiconductor layer. The opt...

Full description

Saved in:
Bibliographic Details
Main Authors Kopp, Fabian, Molnar, Attila, Eberhard, Franz
Format Patent
LanguageEnglish
Published 30.07.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:An optoelectronic semiconductor component comprises a first semiconductor layer of a first conductivity type having a first main surface and a second semiconductor layer of a second conductivity type arranged on a side facing away from the first main surface of the first semiconductor layer. The optoelectronic semiconductor component further comprises, on the side of the first main surface, a first current spreading structure electrically connected to the first semiconductor layer and a second current spreading structure electrically connected to the second semiconductor layer. The optoelectronic semiconductor component furthermore includes a dielectric mirror layer arranged on the side of the first main surface of the first semiconductor layer and on a side of the first or second current spreading structure facing away from the first semiconductor layer. At least one of the first and second current spreading structures contains silver.
Bibliography:Application Number: US201917258757