Non-planar transistor devices and methods of manufacturing thereof

• Main Authors: Lin, Chih-Han, Lin, Shih-Yao, Lee, Hsiao Wen
• Format: Patent
• Language: English
• Published: 30.07.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method for making a semiconductor device includes forming a fin structure that extends along a first direction and comprises a plurality of sacrificial layers and a plurality of channel layers alternately stacked on top of one another. The method includes forming a dummy gate structure, over the fin structure, that extends along a second direction perpendicular to the first direction. The method includes forming a gate spacer extending along respective upper sidewall portions of the dummy gate structure, thereby defining a first distance between a bottom surface of the gate spacer and a top surface of a topmost one of the plurality of channel layers. The first distance is either zero or similar to a second distance that separates neighboring ones of the plurality of channel layers.