Methods and apparatus to create a physically unclonable function

Methods and apparatus for creating a physically unclonable function for SRAM are disclosed. An example method includes decreasing a supply voltage of a memory array to a first voltage level, the first voltage level being below a normal operating voltage associated with the memory array, reading a fi...

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Bibliographic Details
Main Authors Kwong, Joyce, Bittlestone, Clive, Goel, Manish
Format Patent
LanguageEnglish
Published 30.07.2024
Subjects
CALCULATING
COMPUTING
COUNTING
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC DIGITAL DATA PROCESSING
ELECTRICITY
PHYSICS
TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHICCOMMUNICATION
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Summary:Methods and apparatus for creating a physically unclonable function for SRAM are disclosed. An example method includes decreasing a supply voltage of a memory array to a first voltage level, the first voltage level being below a normal operating voltage associated with the memory array, reading a first value of a bit cell after the supply voltage has been at the first voltage level, and determining a function based on the first value of the bit cell and a second value, the second value stored in the bit cell when the memory array is operating at a voltage level above the first voltage level, the function to represent an identification of a circuit including the memory array.
Bibliography:Application Number: US202017130076