Method for growing high-quality heteroepitaxial monoclinic gallium oxide crystal

• Main Author: Akyol, Fatih
• Format: Patent
• Language: English
• Published: 30.07.2024
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

Disclosed is a method for growing a high-quality heteroepitaxial β-Ga2O3 crystal by specifically using low-pressure chemical vapor deposition (LPCVD) method in the field of chemical vapor deposition, wherein said method includes the process steps of; preparing the substrate having hexagonal surfaces cut in different directions with inclinations such that the inclination angle is in a range between 2° and 10°; physically carrying the vapor obtained from Gallium heated in the second zone to the pump/sample by means of Argon gas; driving oxygen into the system with a separate ceramic or refractory metal tube and vertically transferring it onto the surface of the sample directly over the substrate; creating the core layer of β-Ga2O3 on the surface such that the ratio of Ga:O surface atoms on the growing surface is in a range between 10:1 and 1:10 so as to ensure that the surface atoms of Ga and O create the β-Ga2O3 crystal on the heated substrate; growing the core region of β-Ga2O3 at a thickness between 5 nm-2000 nm and at the growth rate between 10 nm/h-500 nm/h; maintaining the growing process on the core layer created in the previous step such that the β-Ga2O3 growth rate is in a range between 100 nm/h and 10 μm/h.