Methods to improve the quantum yield of indium phosphide quantum dots

This disclosure pertains to the field of nanotechnology. The disclosure provides methods of preparing nanostructures using in situ prepared zinc dioleate and/or a metal halide. The nanostructures have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stabilit...

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Main Authors Hartlove, Jason, Hotz, Charles, Wang, Chunming, Chow, Yeewah Annie, Tu, Alexander, Jen-La Plante, Ilan, Guo, Wenzhou, Tu, Minghu, Tillman, Jason Travis, Ippen, Christian, Curley, John J, Gong, Ke
Format Patent
LanguageEnglish
Published 30.07.2024
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Summary:This disclosure pertains to the field of nanotechnology. The disclosure provides methods of preparing nanostructures using in situ prepared zinc dioleate and/or a metal halide. The nanostructures have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are nanostructures prepared using the methods. And, nanostructure films and molded articles comprising the nanostructures are also provided.
Bibliography:Application Number: US202016847782