Etch stop and protection layer for capacitor processing in electroacoustic devices

Electroacoustic devices with a capacitive element and methods for fabricating such electroacoustic devices. An example method includes forming an acoustic device above a first region of a substrate, and forming a capacitive element above a second region of the substrate and adjacent to the acoustic...

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Bibliographic Details
Main Authors Eggs, Christoph, Telgmann, Thomas, Lukashov, Ilya, Esquius Morote, Marc, Giesen, Marcel, Jungkunz, Matthias, Pohlner, Stephan, Freisleben, Stefan
Format Patent
LanguageEnglish
Published 23.07.2024
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Summary:Electroacoustic devices with a capacitive element and methods for fabricating such electroacoustic devices. An example method includes forming an acoustic device above a first region of a substrate, and forming a capacitive element above a second region of the substrate and adjacent to the acoustic device. The forming of the capacitive element may include forming a protective layer above the substrate where a first portion of the protective layer is above the second region of the substrate and a second portion of the protective layer is above the first region of the substrate, forming a dielectric region above the protective layer, and forming an electrode above the dielectric region. The dielectric region may include a different material than the protective layer.
Bibliography:Application Number: US202117240752