EPI chamber with full wafer laser heating

An apparatus for heating a substrate within a thermal processing chamber is disclosed. The apparatus includes a chamber body, a gas inlet, a gas outlet, an upper window, a lower window, a substrate support, and an upper heating device. The upper heating device is a laser heating device and includes...

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Bibliographic Details
Main Authors Tannous, Adel George, Lau, Shu-Kwan Danny, Genis, Patrick C, Ye, Zhiyuan
Format Patent
LanguageEnglish
Published 09.07.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An apparatus for heating a substrate within a thermal processing chamber is disclosed. The apparatus includes a chamber body, a gas inlet, a gas outlet, an upper window, a lower window, a substrate support, and an upper heating device. The upper heating device is a laser heating device and includes one or more laser assemblies. The laser assemblies include light sources, a cooling plate, optical fibers, and irradiation windows.
Bibliography:Application Number: US202017011781