Magnetic memory device including magnetoresistance effect element

According to one embodiment, a magnetic memory device includes a magnetoresistance effect element including first and second magnetic layers each having a fixed magnetization direction, a third magnetic layer provided between the first and second magnetic layers, and having a variable magnetization...

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Bibliographic Details
Main Authors Itai, Shogo, Daibou, Tadaomi, Ito, Yuichi, Komatsu, Katsuyoshi
Format Patent
LanguageEnglish
Published 02.07.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRICITY
INDUCTANCES
MAGNETS
SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
TRANSFORMERS
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Summary:According to one embodiment, a magnetic memory device includes a magnetoresistance effect element including first and second magnetic layers each having a fixed magnetization direction, a third magnetic layer provided between the first and second magnetic layers, and having a variable magnetization direction, a first nonmagnetic layer between the first and third magnetic layers, and a second nonmagnetic layer between the second and third magnetic layers, and a switching element connected in series to the magnetoresistance effect element, changing from an electrically nonconductive state to an electrically conductive state when a voltage applied between two terminals is higher than or equal to a threshold voltage.
Bibliography:Application Number: US202117202151