Semiconductor memory devices and methods of fabricating the same

A semiconductor memory device includes an active pattern on a substrate, the active pattern including a source/drain pattern in an upper portion thereof, a gate electrode on the active pattern and extended in a first direction, the gate electrode and the source/drain pattern adjacent to each other i...

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Main Authors Park, Juhun, Bae, Deokhan, Lee, Yuri, Hong, Sooyeon, Jung, Yoonyoung
Format Patent
LanguageEnglish
Published 02.07.2024
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Abstract A semiconductor memory device includes an active pattern on a substrate, the active pattern including a source/drain pattern in an upper portion thereof, a gate electrode on the active pattern and extended in a first direction, the gate electrode and the source/drain pattern adjacent to each other in a second direction that crosses the first direction, and a shared contact coupled to the source/drain pattern and the gate electrode to electrically connect the source/drain pattern and the gate electrode. The shared contact includes active and gate contacts, which are electrically connected to the source/drain pattern and the gate electrode, respectively. The gate contact includes a body portion coupled to the gate electrode and a protruding portion, which protrudes from the body portion in the second direction and extends into and buried in the active contact.
AbstractList A semiconductor memory device includes an active pattern on a substrate, the active pattern including a source/drain pattern in an upper portion thereof, a gate electrode on the active pattern and extended in a first direction, the gate electrode and the source/drain pattern adjacent to each other in a second direction that crosses the first direction, and a shared contact coupled to the source/drain pattern and the gate electrode to electrically connect the source/drain pattern and the gate electrode. The shared contact includes active and gate contacts, which are electrically connected to the source/drain pattern and the gate electrode, respectively. The gate contact includes a body portion coupled to the gate electrode and a protruding portion, which protrudes from the body portion in the second direction and extends into and buried in the active contact.
Author Park, Juhun
Hong, Sooyeon
Bae, Deokhan
Jung, Yoonyoung
Lee, Yuri
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Snippet A semiconductor memory device includes an active pattern on a substrate, the active pattern including a source/drain pattern in an upper portion thereof, a...
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SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title Semiconductor memory devices and methods of fabricating the same
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