Semiconductor memory devices and methods of fabricating the same

A semiconductor memory device includes an active pattern on a substrate, the active pattern including a source/drain pattern in an upper portion thereof, a gate electrode on the active pattern and extended in a first direction, the gate electrode and the source/drain pattern adjacent to each other i...

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Bibliographic Details
Main Authors Park, Juhun, Bae, Deokhan, Lee, Yuri, Hong, Sooyeon, Jung, Yoonyoung
Format Patent
LanguageEnglish
Published 02.07.2024
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Summary:A semiconductor memory device includes an active pattern on a substrate, the active pattern including a source/drain pattern in an upper portion thereof, a gate electrode on the active pattern and extended in a first direction, the gate electrode and the source/drain pattern adjacent to each other in a second direction that crosses the first direction, and a shared contact coupled to the source/drain pattern and the gate electrode to electrically connect the source/drain pattern and the gate electrode. The shared contact includes active and gate contacts, which are electrically connected to the source/drain pattern and the gate electrode, respectively. The gate contact includes a body portion coupled to the gate electrode and a protruding portion, which protrudes from the body portion in the second direction and extends into and buried in the active contact.
Bibliography:Application Number: US202117538064