Selective etch using a sacrificial mask

A method for selectively etching a silicon oxide region with respect to a lower oxygen silicon containing region is provided. A sacrificial mask selectively deposited on the lower oxygen silicon containing region with respect to the silicon oxide region. An atomic layer etch selectively etches the s...

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Bibliographic Details
Main Authors Li, Da, Peter, Daniel, Yu, Jengyi, Tan, Samantha SiamHwa, Kabansky, Alexander, Lee, Younghee, Nardi, Katie
Format Patent
LanguageEnglish
Published 02.07.2024
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