Selective etch using a sacrificial mask
A method for selectively etching a silicon oxide region with respect to a lower oxygen silicon containing region is provided. A sacrificial mask selectively deposited on the lower oxygen silicon containing region with respect to the silicon oxide region. An atomic layer etch selectively etches the s...
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Main Authors | , , , , , , |
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Format | Patent |
Language | English |
Published |
02.07.2024
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Subjects | |
Online Access | Get full text |
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