Selective etch using a sacrificial mask

A method for selectively etching a silicon oxide region with respect to a lower oxygen silicon containing region is provided. A sacrificial mask selectively deposited on the lower oxygen silicon containing region with respect to the silicon oxide region. An atomic layer etch selectively etches the s...

Full description

Saved in:
Bibliographic Details
Main Authors Li, Da, Peter, Daniel, Yu, Jengyi, Tan, Samantha SiamHwa, Kabansky, Alexander, Lee, Younghee, Nardi, Katie
Format Patent
LanguageEnglish
Published 02.07.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A method for selectively etching a silicon oxide region with respect to a lower oxygen silicon containing region is provided. A sacrificial mask selectively deposited on the lower oxygen silicon containing region with respect to the silicon oxide region. An atomic layer etch selectively etches the silicon oxide region with respect to the sacrificial mask on the lower oxygen silicon containing region.
Bibliography:Application Number: US202017428560