Doping for semiconductor device with conductive feature

The present disclosure relates generally to doping for conductive features in a semiconductor device. In an example, a structure includes an active region of a transistor. The active region includes a source/drain region, and the source/drain region is defined at least in part by a first dopant havi...

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Main Authors Chen, Chia-Cheng, Yang, Huai-Tei, Wu, Chun-Hung, Chen, Liang-Yin, Chang, Huicheng, Tan, Lun-Kuang, Chen, Kuo-Ju, You, Wei-Ming, Liu, Su-Hao, Liu, Chang-Miao
Format Patent
LanguageEnglish
Published 18.06.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present disclosure relates generally to doping for conductive features in a semiconductor device. In an example, a structure includes an active region of a transistor. The active region includes a source/drain region, and the source/drain region is defined at least in part by a first dopant having a first dopant concentration. The source/drain region further includes a second dopant with a concentration profile having a consistent concentration from a surface of the source/drain region into a depth of the source/drain region. The consistent concentration is greater than the first dopant concentration. The structure further includes a conductive feature contacting the source/drain region at the surface of the source/drain region.
Bibliography:Application Number: US202318350838