Semiconductor devices including through-silicon-vias and methods of manufacturing the same and semiconductor packages including the semiconductor devices

• Main Authors: Fujisaki, Atsushi, Moon, Kwang-Jin, Park, Byung-Lyul, An, Jin-Ho, Choi, Ju-Il
• Format: Patent
• Language: English
• Published: 18.06.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method of manufacturing a semiconductor device is provided. The method includes forming a preliminary via structure through a portion of a substrate; partially removing the substrate to expose a portion of the preliminary via structure; forming a protection layer structure on the substrate to cover the portion of the preliminary via structure that is exposed; partially etching the protection layer structure to form a protection layer pattern structure and to partially expose the preliminary via structure; wet etching the preliminary via structure to form a via structure; and forming a pad structure on the via structure to have a flat top surface.