Self-aligned interconnect with protection layer
An integrated circuit structure includes a first Inter-Layer Dielectric (ILD), a gate stack in the first ILD, a second ILD over the first ILD, a contact plug in the second ILD, and a dielectric protection layer on opposite sides of, and in contact with, the contact plug. The contact plug and the die...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
11.06.2024
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Subjects | |
Online Access | Get full text |
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Summary: | An integrated circuit structure includes a first Inter-Layer Dielectric (ILD), a gate stack in the first ILD, a second ILD over the first ILD, a contact plug in the second ILD, and a dielectric protection layer on opposite sides of, and in contact with, the contact plug. The contact plug and the dielectric protection layer are in the second ILD. A dielectric capping layer is over and in contact with the contact plug. |
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Bibliography: | Application Number: US202117227056 |