Semiconductor device

A semiconductor device includes a semiconductor substrate, a gate electrode, a source/drain contact, a conductive structure, an interlayer dielectric (ILD) layer, an etch stop layer, and a dielectric liner. The semiconductor substrate has a channel region and a source/drain region. The gate electrod...

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Bibliographic Details
Main Authors Lin, Yu-Ming, Lien, Wai-Yi, You, Jia-Chuan, Wang, Chih-Hao, Chang, Chia-Hao
Format Patent
LanguageEnglish
Published 11.06.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a semiconductor substrate, a gate electrode, a source/drain contact, a conductive structure, an interlayer dielectric (ILD) layer, an etch stop layer, and a dielectric liner. The semiconductor substrate has a channel region and a source/drain region. The gate electrode is over the channel region. The source/drain contact is over the source/drain region. The conductive structure is over a top surface of the source/drain contact. The ILD layer surrounds the conductive structure and over the gate electrode. The etch stop layer is over the conductive structure and the ILD layer. The etch stop layer comprises a material different from that of the ILD layer. A dielectric liner at a sidewall the conductive structure. The dielectric liner extends from the top surface of the source/drain contact to a bottom surface of the etch stop layer.
Bibliography:Application Number: US202217874170