Semiconductor device, FinFET device and methods of forming the same

A semiconductor device includes a substrate, a gate structure on the substrate, a source/drain (S/D) region and a contact. The S/D region is located in the substrate and on a side of the gate structure. The contact lands on and connected to the S/D region. The contact wraps around the S/D region.

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Bibliographic Details
Main Authors Cheng, Po-Hsien, Huang, Tai-Chun, Ko, Chung-Ting, Li, Jr-Hung, Lee, Tze-Liang, Chen, Jr-Yu, Hsieh, Wan-Chen
Format Patent
LanguageEnglish
Published 14.05.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a substrate, a gate structure on the substrate, a source/drain (S/D) region and a contact. The S/D region is located in the substrate and on a side of the gate structure. The contact lands on and connected to the S/D region. The contact wraps around the S/D region.
Bibliography:Application Number: US202217685401