Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereof

A method is provided for preparing a semiconductor-on-insulator structure comprising a silicon nitride layer deposited by plasma deposition.

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Bibliographic Details
Main Author Kweskin, Sasha Joseph
Format Patent
LanguageEnglish
Published 14.05.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method is provided for preparing a semiconductor-on-insulator structure comprising a silicon nitride layer deposited by plasma deposition.
Bibliography:Application Number: US202016864296