Aqueous and semi-aqueous cleaners for the removal of post-etch residues with tungsten and cobalt compatibility

Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-cont...

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Bibliographic Details
Main Authors Song, Lingyan, Cooper, Emanuel I, Lippy, Steven
Format Patent
LanguageEnglish
Published 07.05.2024
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Summary:Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon.
Bibliography:Application Number: US201515324588