Semiconductor laser and projector

In an embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) in which an active zone (22) for generating laser radiation (L) is located. Several electrical contact surfaces (5) serve for external electrical contacting of the semiconductor layer sequence (2). Several par...

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Bibliographic Details
Main Authors Marfeld, Jan, Somers, André, Löffler, Andreas, Gerhard, Sven
Format Patent
LanguageEnglish
Published 30.04.2024
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:In an embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) in which an active zone (22) for generating laser radiation (L) is located. Several electrical contact surfaces (5) serve for external electrical contacting of the semiconductor layer sequence (2). Several parallel ridge waveguides (3) are formed from the semiconductor layer sequence (2) and configured to guide the laser radiation (L) along a resonator axis, so that there is a separating trench (6) between adjacent ridge waveguides. At least one electrical feed (4) serves from at least one of the electrical contact surfaces (5) to guide the current to at least one of the ridge waveguides (3). A distance (A4) between the ridge waveguides is at most 50 μm. The ridge waveguides (3) are electrically controllable individually or in groups independently of one another and/or configured for single-mode operation.
Bibliography:Application Number: US201916982425