Redistribution layers and methods of fabricating the same in semiconductor devices
A semiconductor structure includes a first dielectric layer over a metal line and a redistribution layer (RDL) over the first dielectric layer. The RDL is electrically connected to the metal line. The RDL has a curved top surface and a footing feature, where the footing feature extends laterally fro...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
23.04.2024
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Subjects | |
Online Access | Get full text |
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Summary: | A semiconductor structure includes a first dielectric layer over a metal line and a redistribution layer (RDL) over the first dielectric layer. The RDL is electrically connected to the metal line. The RDL has a curved top surface and a footing feature, where the footing feature extends laterally from a side surface of the RDL. A second dielectric layer is disposed over the RDL, where the second dielectric layer also has a curved top surface. |
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Bibliography: | Application Number: US202318166960 |