Redistribution layers and methods of fabricating the same in semiconductor devices

A semiconductor structure includes a first dielectric layer over a metal line and a redistribution layer (RDL) over the first dielectric layer. The RDL is electrically connected to the metal line. The RDL has a curved top surface and a footing feature, where the footing feature extends laterally fro...

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Bibliographic Details
Main Authors Chen, Dian-Hau, Shen, Hsiang-Ku
Format Patent
LanguageEnglish
Published 23.04.2024
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Summary:A semiconductor structure includes a first dielectric layer over a metal line and a redistribution layer (RDL) over the first dielectric layer. The RDL is electrically connected to the metal line. The RDL has a curved top surface and a footing feature, where the footing feature extends laterally from a side surface of the RDL. A second dielectric layer is disposed over the RDL, where the second dielectric layer also has a curved top surface.
Bibliography:Application Number: US202318166960