Nonvolatile memory device and method for fabricating the same
Provided is a nonvolatile memory device. The nonvolatile memory device includes a conductive plate, a barrier conductive film extending along a surface of the conductive plate, a mold structure including a plurality of gate electrodes sequentially stacked on the barrier conductive film, a channel ho...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
16.04.2024
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Subjects | |
Online Access | Get full text |
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Summary: | Provided is a nonvolatile memory device. The nonvolatile memory device includes a conductive plate, a barrier conductive film extending along a surface of the conductive plate, a mold structure including a plurality of gate electrodes sequentially stacked on the barrier conductive film, a channel hole penetrating the mold structure to expose the barrier conductive film, an impurity pattern being in contact with the barrier conductive film, and formed in the channel hole, and a semiconductor pattern formed in the channel hole, extending from the impurity pattern along a side surface of the channel hole, and intersecting the plurality of gate electrodes. |
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Bibliography: | Application Number: US202218065799 |