Nonvolatile memory device and latch including the same

A nonvolatile memory device according to the embodiment includes: a first inverter; and a second inverter cross-coupled to the first inverter, wherein the second inverter includes a pull-up transistor, a pull-down transistor, and a ferroelectric field effect transistor having gate nodes connected to...

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Bibliographic Details
Main Authors Jung, Seong Ook, Oh, Tae Woo, Kim, Se Keon, Lim, Se Hee, Ko, Dong Han
Format Patent
LanguageEnglish
Published 09.04.2024
Subjects
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
INFORMATION STORAGE
PHYSICS
PULSE TECHNIQUE
STATIC STORES
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Summary:A nonvolatile memory device according to the embodiment includes: a first inverter; and a second inverter cross-coupled to the first inverter, wherein the second inverter includes a pull-up transistor, a pull-down transistor, and a ferroelectric field effect transistor having gate nodes connected to each other, and a restore transistor having one electrode connected to the ferroelectric field effect transistor, and the second inverter stores data in a nonvolatile manner.
Bibliography:Application Number: US202217588180